In this paper, a down-conversion double-balanced micromixer with very good linearity for 5-GHz-band WLAN applications using 0.35-m SiGe BiCMOS technology is presented. Good conversion gain of 7.3 dB, LO-RF isolation of 50 dB, LO-IF isolation of 45 dB, and RF-IF isolation of 28.5 dB are achieved at m
✦ LIBER ✦
A 3-V variable-gain amplifier in Si/SiGe BiCMOS technology for 5-GHz WLAN applications
✍ Scribed by F. Alimenti; V. Palazzari; L. Roselli; A. Scorzoni
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 611 KB
- Volume
- 15
- Category
- Article
- ISSN
- 1096-4290
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## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and