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A 25-W 5-GHz GaAs FET Amplifier for a Microwave Landing System

✍ Scribed by Honjo, K.; Takayama, Y.


Book ID
114657696
Publisher
IEEE
Year
1981
Tongue
English
Weight
788 KB
Volume
29
Category
Article
ISSN
0018-9480

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A monolithic 1.57/5.25-GHz concurrent du
✍ Shey-Shi Lu; Yo-Sheng Lin; Bo-Wei Lee πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 191 KB

## Abstract A monolithic concurrent dual‐band low‐noise amplifier (LNA) using InGaP/GaAs HBT technology is demonstrated for the first time. The LNA provides narrowband gain and matching simultaneously at both 1.57‐GHz (GPS) and 5.25‐GHz (ISM) bands. It consumes only 15‐mW power and achieves transdu