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A 120 ns 4 Mb CMOS EPROM: S Atsumi, S Tanaka, S Saito, N Ohtsuka, N Matsukawa, S Mori, Y Kaneko, K Yoshikawa, J Matsunaga, T Iizuka (Toshiba Semicond. Dev. Eng. Lab., Kawasaki, Japan), N ARAI 1987 IEEE International Solid State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, New York, USA, 25–27 Feb. 1987 (Coral Gables, FL, USA: Lewis Winner, Feb. 1987), pp. 74–75, 344


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
91 KB
Volume
19
Category
Article
ISSN
0026-2692

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✦ Synopsis


A 4-K byte/17-ns cache memory has been introduced to a 1.3 pm CMOS/bipolar macrocell library for VLSI computers. The memory includes an address translation function, which uses an MOS memory cell and a comparator merged with a bipolar sense amplifier to accelerate access time. (6 refs.)


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