Monolithic integration of electroabsorpt
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Q. Zhao; J.Q. Pan; J. Zhang; B.X. Li; F. Zhou; B.J. Wang; L.F. Wang; J. Bian; L.
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Article
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2006
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Elsevier Science
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English
โ 168 KB
A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultralow-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation ar