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A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme

✍ Scribed by Gitae Jeong; Wooyoung Cho; Ahn, S.; Hongsik Jeong; Gwanhyeob Koh; Youngnam Hwang; Kim, K.

No coin nor oath required. For personal study only.

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