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A 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL

✍ Scribed by Washio, K.; Kondo, M.; Ohue, E.; Oda, K.; Hayami, R.; Tanabe, M.; Shimamto, H.; Harada, T.

No coin nor oath required. For personal study only.

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