98/01425 Stability of Cu(In,Ga)Se2 solar cells and evaluation by C–V characteristics: Kojima, T. et al. Solar Energy Materials and Solar Cells, 1998, 50, (1–4)

• Publisher: Elsevier Science
• Year: 1998
• Weight: 202 KB
• Volume: 39
• Category: Article
• ISSN: 0140-6701
• DOI: 10.1016/s0140-6701(98)97567-1

✦ Synopsis

Process damage free thin-film

GaAs cells detached from the GaAs substrates are presented. GaAs cells grown by gas-source MBE were thinned by the epitaxial lift-off (ELO) technique. A peak splitting in the band emission was shown by photoluminescence spectroscopy, which inferred a strain was induced in the thin-film cell fixed on the quartz glass substrate. The quality of the thin-film cells, however, was not affected by the strain, based on the fact that the peak intensity was almost twice that before ELO. The thin-film GaAs cells showed no evidence of degradation in diode characteristics and spectral responses. Damage on the active region of the solar cell during the thinning process can be principally avoided by introducing a GaInP window layer and improving the thin film process including metallization on thin film cells. The thinning and transfer processes do not affect the quality of the active region of the cells, as shown by these results.