## Process damage free thin-film GaAs cells detached from the GaAs substrates are presented. GaAs cells grown by gas-source MBE were thinned by the epitaxial lift-off (ELO) technique. A peak splitting in the band emission was shown by photoluminescence spectroscopy, which inferred a strain was ind
98/01423 Radiation degradation of large fluence irradiated space silicon solar cells: Hisamatsu, T. et al. Solar Energy Materials and Solar Cells, 1998, 50, (1–4), 331–338
- Publisher
- Elsevier Science
- Year
- 1998
- Weight
- 202 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0140-6701
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✦ Synopsis
07 Alternative energy sources (wind energy)
Process damage free thin-film GaAs solar cells by epitaxlal liftoff with GalnP window layer
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is designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapour deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that with a conventional GaAs buffer layer and also that fabricated on GaA
## Process damage free thin-film GaAs cells detached from the GaAs substrates are presented. GaAs cells grown by gas-source MBE were thinned by the epitaxial lift-off (ELO) technique. A peak splitting in the band emission was shown by photoluminescence spectroscopy, which inferred a strain was ind