is designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapour deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that with a conventional GaAs buffer layer and also that fabricated on GaA
✦ LIBER ✦
98/01408 High-efficiency silicon space solar cells: Suzuki, A. Solar Energy Materials and Solar Cells, 1998, (1–4), 289–303
- Book ID
- 104287160
- Publisher
- Elsevier Science
- Year
- 1998
- Weight
- 199 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0140-6701
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