Progress in Low-temperature Surface Pass
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Armin G. Aberle; Rudolf Hezel
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Article
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1997
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John Wiley and Sons
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English
⚖ 391 KB
👁 2 views
Using a remote-plasma technique as opposed to the conventional direct-plasma technique, signi®cant progress has been obtained at ISFH in the area of lowtemperature surface passivation of p-type crystalline silicon solar cells by means of silicon nitride (SiN) ®lms fabricated at 350±4008C in a plasma