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95/05443 CMOS ASICs for voltages of up to 40 V

Publisher: Elsevier Science
Year: 1995
Weight: 196 KB
Volume: 36
Category: Article
ISSN: 0140-6701
DOI: 10.1016/0140-6701(95)97169-k

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Simulation of bandgap narrowing and inco

Simulation of bandgap narrowing and incomplete ionization in strained Si1−xGex alloys on 〈001〉 Si substrate (for temperatures from 40 K up to 400 K)

✍ Yevgeny V. Mamontov; Magnus Willander 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 876 KB