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930-V 170-m<tex>$Omega cdot hbox cm^2$</tex>Lateral Two-Zone RESURF MOSFETs in 4H-SiC With NO Annealing

✍ Scribed by W. Wang; S. Banerjee; T. Chow; R. Gutmann

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

8.5-<tex>$hbox mOmega cdot hbox cm

✍ Harada, S.; Okamoto, M.; Yatsuo, T.; Adachi, K.; Fukuda, K.; Arai, K. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 147 KB

930-V 170-m&lt;tex&gt;$Omega cdot hbox cm^2$&lt;/tex&gt;Lateral Two-Zone RESURF MOSFETs in 4H-SiC With NO Annealing