8.5-<tex>$hbox mOmega cdot hbox cm^2$</tex>600-V Double-Epitaxial MOSFETs in 4H–SiC

✍ Scribed by Harada, S.; Okamoto, M.; Yatsuo, T.; Adachi, K.; Fukuda, K.; Arai, K.

• Book ID: 125521601
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 147 KB
• Volume: 25
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2004.826538