7300. Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4 source molecular beam epitaxy: Y Koide et al,J Appl Phys, 68, 1990,

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 153 KB
• Volume: 42
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(91)91107-y