## Abstract Monopoles of 1‐mm axial length are designed and fabricated on silicon substrates of high‐resistivity 5 kΩ‐cm and low‐resistivity 10 Ω‐cm, respectively. We measure their performance up to 110 GHz for wireless interconnects for the first time. The reflection measurements show that a sharp
60 GHz high resistivity silicon on insulator interdigitated dipole antenna
✍ Scribed by M. H. Barakat; C. Delaveaud; F. Ndagijimana
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 426 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
The performance of a 60 GHz interdigitated dipole antenna integrated on SOI is described. The SOI substrate effect has been compensated by the introduction of an interdigitated structure. Good dipole matching impedance at 60 GHz over a bandwidth of 8% is obtained. Backside substrate metallization has been used to improve the radiation properties. A novel test method is used to measure the gain patterns of the dipole. The resulting measured radiation efficiency is 80% with a gain around 3 dBi at 60 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1197–1201, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25132
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