𝔖 Bobbio Scriptorium

✦ LIBER ✦

596. Influence of ion implantation on density of dislocations in Si: R I Garber et al, Radiation Physics of Nonmetallic Crystals, 3 (2), Collect, Naukovaya Dumka Kiev 1971, 128–133 (in Russian)

Publisher: Elsevier Science
Year: 1972
Tongue: English
Weight: 140 KB
Volume: 22
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(72)90447-2

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592. Radiation damage of semiconductor c

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594. Investigation of microhardness of s

594. Investigation of microhardness of surface layers of silicon doped by ion implantation: I L Gverdtsiteli et al, Radiation Physics of Nonmetallic Crystals, 3 (2), Collect, Naukovaya Dumka Kiev 1971, 138–143 (in Russian)

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Chanelling of boron ions with energy up

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Mass-spectrometry determination of the b

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Silicon doping by ion bombardment: I B A

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