𝔖 Bobbio Scriptorium
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573 K operation AlGaN/GaN HFET with enhancement operation on Si substrate

✍ Scribed by S. Yoshida; J. Li; N. Ikeda


Book ID
104557411
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
193 KB
Volume
2
Category
Article
ISSN
1862-6351

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Investigation of buffer structures for t
✍ Yoshida, Seikoh ;Katoh, Sadahiro ;Takehara, Hironari ;Satoh, Yoshihiro ;Li, Jian πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 333 KB

## Abstract In order to obtain a high quality thick GaN layer on a 2‐inch Si substrate without any crack, we investigated three kinds of buffer layer (AlGaN graded structure, AlN/GaN super lattice (SL) structure, and AlN/thick GaN/AlN structure) using a metal‐organic chemical vapor deposition (MOCV