𝔖 Bobbio Scriptorium

✦ LIBER ✦

5020. LEED intensity analysis of the structure of Al on GaAs(110): A Kahn et al, J Vac Sci Technol, 18 (3), 1981, 792–796

Publisher: Elsevier Science
Year: 1982
Tongue: English
Weight: 168 KB
Volume: 32
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(82)90162-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

5249. Atomic geometry of AlGaAs interfa

5249. Atomic geometry of AlGaAs interfaces: GaAs (110)-p (1 × 1)-Al(θ), 0 ≤ θ ≤ 8.5 monolayers: A Kahn et al, J Vac Sci Technol, 19 (3), 1981, 331–334

📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 156 KB

5021. Analysis of low-energy electron di

5021. Analysis of low-energy electron diffraction intensities from ZnS(110): C B Duke et al, J Vac Sci Technol, 18 (3), 1981, 866–870

📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 168 KB

5028. The structure of NH3 on Ni(111): T

5028. The structure of NH3 on Ni(111): T E Madey et al, J Vac Sci Technol, 18 (3), 1981, 476–480

📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 175 KB

5248. LEED investigation of extended def

5248. LEED investigation of extended defects at the surface of Ge films grown epitaxially on GaAs(110): H M Clearfield et al, J Vac Sci Technol, 19 (3), 1981, 323–330

📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 156 KB

5000. A study of the initial oxidation o

5000. A study of the initial oxidation of polycrystalline Si using surface analysis techniques: L L Kazmerski et al, J Vac Sci Technol, 18 (3), 1981, 960–964

📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 169 KB