𝔖 Bobbio Scriptorium

✦ LIBER ✦

502. Investigations on determination of charge carrier concentration and mobility in implanted films: F Burkhardt et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 173–181 (in German).

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 165 KB
Volume: 24
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(74)92016-8

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508. Investigation of radiation defects

508. Investigation of radiation defects in implanted silicon films: G Goetz et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 95–100 (in Russian).

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370. Investigation of distribution of co

370. Investigation of distribution of concentrations of phosphorus and boron implanted in silicon: Ya Krylov et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 157–163 (in Russian).

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503. Iop diffraction investigations of s

503. Iop diffraction investigations of silicon and gold epitaxial films: G Gotz et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 972, 1105–1110 (in German).

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377. Electronic stopping cross section o

377. Electronic stopping cross section of boron in silicon: E Jager et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 121–126 (in German).

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368. Investigation of the process of gen

368. Investigation of the process of generation of defects at ion implantation: N N Gerasimenko et al, Proc Int Work Conf on Ion Implant in Semicon, Rossendorf 1972, 45–52 (in Russian).

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