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50 MeV Li 3+ ion irradiation effects on advanced 200 GHz SiGe HBTs

✍ Scribed by Praveen, K. C.; Pushpa, N.; Tripathi, Ambuj; Revannasiddaiah, D.; Cressler, John D.; Gnana Prakash, A. P.


Book ID
126798710
Publisher
Taylor and Francis Group
Year
2011
Tongue
English
Weight
670 KB
Volume
166
Category
Article
ISSN
1042-0150

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Effect of 50 MeV Li3+ ion irradiati
✍ C.M. Dinesh; Ramani; M.C. Radhakrishna; R.N. Dutt; S.A. Khan; D. Kanjilal πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 192 KB

Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 Γ‚ 10 11 -1.8 Γ‚ 10 12 ions cm Γ€2 on NPN power transistor. The rang