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5-60-GHz high-gain distributed amplifier utilizing InP cascode HEMTs

โœ Scribed by Yuen, C.; Pao, Y.C.; Bechtel, N.G.


Book ID
119773640
Publisher
IEEE
Year
1992
Tongue
English
Weight
524 KB
Volume
27
Category
Article
ISSN
0018-9200

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## Abstract In this letter, the monolithic distributed amplifier with active control scheme is presented, using 0.1 ฮผm GaAs metamorphic HEMT technology, with a maximum operating frequency of 315 GHz. Active feedback resistor, which adjusts the negative resistance generated by the cascode gain cell,