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4402001 Semiconductor element capable of withstanding high voltage

✍ Scribed by Naohiro Momma; Hiroyuki Taniguchi

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
81 KB
Volume
24
Category
Article
ISSN
0026-2714

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The equilibrium sizes of micro-and nano-domains caused by electric field of atomic force microscope tip in ferroelectricsemiconductor crystals have been calculated. The domain was considered as a prolate semi-ellipsoid with rather thin domain walls. For the first time we modified the Landauer model