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3D modeling of thermal annealing of ion-implanted impurities

โœ Scribed by M. V. Kazitov; V. V. Nelaev; E. F. Nogotov


Book ID
110622674
Publisher
Springer US
Year
1998
Tongue
English
Weight
428 KB
Volume
71
Category
Article
ISSN
1573-871X

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A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and