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3993. Molecular beam epitaxy of GaAs and simultaneous characterization by RHEED, SIMS and AES techniques. (Germany)

Book ID
108390007
Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
105 KB
Volume
29
Category
Article
ISSN
0042-207X

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πŸ“œ SIMILAR VOLUMES

Growth and characterization of GaAs on s
Growth and characterization of GaAs on sapphire (0001) by molecular beam epitaxy
✍ Alain C. Diebold; S. W. Steinhauser; R. P. Mariella Jr.; Jordi Marti; F. Reiding πŸ“‚ Article πŸ“… 1990 πŸ› John Wiley and Sons 🌐 English βš– 922 KB

## Abstract Crystal epilayers of (111)‐oriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm^2^) with no grain boundaries were observed. Both substrate surface preparati