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31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate

✍ Scribed by Yin, Tao; Cohen, Rami; Morse, Mike M.; Sarid, Gadi; Chetrit, Yoel; Rubin, Doron; Paniccia, Mario J.


Book ID
115408214
Publisher
Optical Society of America
Year
2007
Tongue
English
Weight
967 KB
Volume
15
Category
Article
ISSN
1094-4087

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Silicon-on-insulator and SiGe waveguide
✍ M. El Kurdi; P. Boucaud; S. Sauvage; G. Fishman; O. Kermarrec; Y. Campidelli; D. πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 192 KB

We have investigated near infrared p-i-n waveguide photodetectors with Ge/Si self-assembled islands as optical active region. Two samples with Ge islands grown by high-pressure chemical vapor deposition were studied. The ΓΏrst sample consists of a p-i-n junction with islands embedded in a silicon-on-