2483. Investigation of reactively sputtered silicon nitride films by complementary use of backscattering and nuclear-reaction microanalysis

• Publisher: Elsevier Science
• Year: 1977
• Tongue: English
• Weight: 141 KB
• Volume: 27
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(77)80832-4

✦ Synopsis

Classified abstracts 2475-2483 at 600°C in 11.2 ~ Ag/Cu bimetallic thin films prepared by vapour deposition on mica. The technique consists in matching experimental intensity bands to those calculated from assumed concentration profiles. The profiles which gave best fit in the Ag-rich layer were analysed by means of a linear diffusion equation solved in a finite region with fixed interface. The value of 1.45 × I0-t2 cm2/sec was obtained for the interdiffusion coefficient in the Ag-rich phase.