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2-D Compact Model for Drain Current of Fully Depleted Nanoscale GeOI MOSFETs for Improved Analog Circuit Design

✍ Scribed by Mondal, Chandrima; Biswas, Abhijit


Book ID
121467326
Publisher
IEEE
Year
2013
Tongue
English
Weight
898 KB
Volume
60
Category
Article
ISSN
0018-9383

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## Abstract An accurate analytical model for the transconductance‐to‐current ratio (__g~m~__/__I~ds~__), current–voltage characteristics, and drain conductance is developed for a vertical surrounding‐gate (VSG) MOSFET based on the solution of the 2‐D Poisson's equation. The dependence of __g~m~__/_