1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique

✍ Scribed by J.T. Horstmann; U. Hilleringmann; K. Goser

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 379 KB
• Volume: 53
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(00)00299-9