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1.3-μm Quantum-Dot Multisection Superluminescent Diodes With Extremely Broad Bandwidth

✍ Scribed by Xin, Y.-C.; Martinez, A.; Saiz, T.; Moscho, A.J.; Li, Y.; Nilsen, T.A.; Gray, A.L.; Lester, L.F.


Book ID
119803500
Publisher
IEEE
Year
2007
Tongue
English
Weight
315 KB
Volume
19
Category
Article
ISSN
1041-1135

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1.3 µm InAs/GaAs quantum dots with broad
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## Abstract InAs/GaAs quantum dot (QD) structures with broad emission spectra are grown by metal‐organic chemical vapor deposition. The effects of Indium composition of InGaAs strain‐reducing layer and InAs deposited coverage on the optical properties and structural characterization of QDs are inve