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100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHz

โœ Scribed by Sun, H.F.; Alt, A.R.; Benedickter, H.; Bolognesi, C.R.


Book ID
121527722
Publisher
The Institution of Electrical Engineers
Year
2009
Tongue
English
Weight
149 KB
Volume
45
Category
Article
ISSN
0013-5194

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