AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

✍ Scribed by Boulay, S.; Touati, S.; Sar, A.A.; Hoel, V.; Gaquiere, C.; De Jaeger, J.-C.; Joblot, S.; Cordier, Y.; Semond, F.; Massies, J.

• Book ID: 114618972
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 828 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.907189