Nd:LuVO~4~ crystal was used for the most compact and the simplest laser, i.e. the microchip construction. LD (laser diode)-pumped, continuous-wave output property was detected on several Nd:LuVO~4~ microchips with different Nd^3+^ doping level, crystal length, and transmittance of output surface. Wi
10 W continuous-wave Nd:GdVO4 microchip laser
β Scribed by M. Liao; R. Lan; Z. Wang; H. Zhang; J. Wang; X. Hou; X. Xu
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 126 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1612-2011
No coin nor oath required. For personal study only.
β¦ Synopsis
In this letter we reported a LD end-pumped high power Nd:GdVO~4~ microchip laser. With a 0.5 at.%, 1.5 mm, T = 1% Nd:GdVO~4~ crystal, 10.1 W maximum output was achieved, corresponding an optical-optical conversion efficiency of 42.3%. The pump threshold was as low as 0.21 W.
π SIMILAR VOLUMES
We obtain continuous wave mode-locked Nd:GdVO 4 -KTP laser with a SESAM. This is the first report of CW modelocked Nd:GdVO 4 -KTP laser with a SESAM to our knowledge. 396 mw CW mode-locked pulse is achieved at the incident power of 7.653 W, with the repetition about 95 MHz. The pulse duration is ass
Effective CW and A-O Q-switched laser operations were demonstrated firstly using a continuous-grown GdVO 4 /Nd:GdVO 4 composite rod. A maximum CW output power of 19.2 W was obtained with the slope efficiency of 79.6% and the maximum optical-optical efficiency of 73.0% to absorbed pump power. In A-O
High efficiency operation on continuous-wave (cw) 912 nm laser at room temperature in Nd:GdVO4 crystal pumped by 808 nm diode-laser is reported in this letter. The maximum output power of 8.0 W was obtained at the incident un-polarized pump power of 47.0 W, giving the corresponding optical-tooptical
The quasi-three-level 912 nm continuous-wave laser emission under direct diode laser pumping at 880 nm into emitting level 4 F 3/2 of Nd:GdVO 4 have been demonstrated. An endpumped Nd:GdVO 4 crystal yielded 8.1 W of output power for 13.9 W of absorbed pump power. The slope efficiency with respect to
Efficient continuous-wave intracavity frequency doubling of a diode-end-pumped Nd:GdVO4 laser operating on 4 F 3/2 -4 I 11/2 transitions at 1083 nm (generally used for a 1063 nm emission) has been demonstrated for the first time. With 18.7 W of diode pump power and the frequency-doubling crystal LiB