0.15-μm buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer

✍ Scribed by Ohguro, T.; Yamada, K.; Sugiyama, N.; Imai, S.; Usuda, K.; Yoshitomi, T.; Fiegna, C.; Ono, M.; Saito, M.; Momose, H.S.; Katsumata, Y.; Iwai, H.

• Book ID: 114537214
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 119 KB
• Volume: 45
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.661233