This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce
00/00350 Chemical studies of solar cell structures based on electrodeposited CuInSe2
- Publisher
- Elsevier Science
- Year
- 2000
- Weight
- 204 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0140-6701
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