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α-Sn pseudomorphic growth on InSb (111) and (111) surfaces: a high-resolution photoemission study

✍ Scribed by Paolo Fantini; Sandra Gardonio; Pietro Barbieri; Umberto del Pennino; Carlo Mariani; Maria Grazia Betti; Elena Magnano; Marina Pivetta; Massimo Sancrotti

Book ID
117214989
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
223 KB
Volume
463
Category
Article
ISSN
0039-6028

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## Abstract The influence of boron on Si molecular beam epitaxy was investigated as function of coverage and temperature by reflection high‐energy electron diffraction (RHEED). The development of the boron‐covered Si surface was studied additionally by ultraviolet photo electron spectroscopy (UPS)