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ZnSe/GaAs heterostructure bipolar transistors: design and operation of a new II-VI/III-V device structure
✍ Scribed by Glaeser, A.; Nahory, R.; Tamargo, M.; Merz, J.
- Book ID
- 114534810
- Publisher
- IEEE
- Year
- 1991
- Tongue
- English
- Weight
- 267 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0018-9383
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