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ZnO films grown using a novel procedure based on the reactive evaporation method

โœ Scribed by J.S. Oyola; J.M. Castro; G. Gordillo

Book ID
113914724
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
741 KB
Volume
102
Category
Article
ISSN
0927-0248

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Photoluminescence properties of nitrogen
Photoluminescence properties of nitrogen-doped ZnO films deposited on ZnO single crystal substrates by the plasma-assisted reactive evaporation method
โœ A. Nakagawa; F. Masuoka; S. Chiba; H. Endo; K. Megro; Y. Kashiwaba; T. Ojima; K. ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 411 KB

Photoluminescence (PL) spectra of nitrogen-doped ZnO films (ZnO:N films) grown epitaxially on n-type ZnO single crystal substrates by using the plasma-assisted reactive evaporation method were measured at 5 K. In PL spectra, free exciton emission at about 3.375 eV was very strong and emissions at 3.