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Zinc Oxide β€” A Material for Micro- and Optoelectronic Applications

✍ Scribed by Robert Triboulet, Vicente Munoz-Sanjosé, Ramon Tena-Zaera, Mari Carmen Martinez-Tomas (auth.), Norbert H. Nickel, Evgenii Terukov (eds.)


Publisher
Springer Netherlands
Year
2005
Tongue
English
Leaves
245
Series
NATO Science Series II: Mathematics, Physics and Chemistry 194
Edition
1
Category
Library

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✦ Synopsis


Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on β€œZinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.

✦ Table of Contents


The Scope of Zinc Oxide Bulk Growth....Pages 3-14
Growth Mechanism of ZnO Layers....Pages 15-24
Kinetics of High-Temperature Defect Formation in ZnO in the Stream of Oxygen Radicals....Pages 25-34
Electrical Properties of ZnO....Pages 37-46
Electrical Properties of ZnO Thin Films and Single Crystals....Pages 47-57
Structure, Morphology, and Photoluminescence of ZnO Films....Pages 59-68
Optics and Spectroscopy of Point Defects in ZnO....Pages 69-81
Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals....Pages 83-98
Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy....Pages 99-111
Muon Spin Rotation Measurements on Zinc Oxide....Pages 115-123
Hydrogen Donors in Zinc Oxide....Pages 125-132
Hydrogen-Related Defects in ZnO Studied by IR Absorption Spectroscopy....Pages 133-144
Influence of the Hydrogen Concentration on H Bonding in Zinc Oxide....Pages 145-155
Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO....Pages 159-170
Fundamental Optical Spectra and Electronic Structure of ZnO Crystals....Pages 171-182
Photo-Induced Localized Lattice Vibrations in ZnO Doped with 3d Transition Metal Impurities....Pages 183-194
ZnO Window Layers for Solar Cells....Pages 197-209
ZnO/AlGaN Ultraviolet Light Emitting Diodes....Pages 211-216
ZnO Transparent Thin-Film Transistor Device Physics....Pages 217-224
Zinc Oxide Thin-Film Transistors....Pages 225-238

✦ Subjects


Applied Optics, Optoelectronics, Optical Devices; Optical Spectroscopy, Ultrafast Optics


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