Yellow luminescence from precipitates in GaN epilayers
โ Scribed by J. Kang; T. Ogawa
- Book ID
- 106023619
- Publisher
- Springer
- Year
- 1999
- Tongue
- English
- Weight
- 267 KB
- Volume
- 69
- Category
- Article
- ISSN
- 1432-0630
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๐ SIMILAR VOLUMES
GaN grown on sapphire by hydride vapour phase epitaxy is probed by ion channeling, Raman and cathodoluminescence (CL) spectroscopy. Channeling and Raman spectroscopy indicate that the quality of GaN is very good. Spot mode CL measurement signifies intense near band edge emission as compared with yel
The influence of C, N, O, Mg, Si and co-implants (Mg+Si) ions implantation with fluences in the wide range 10 13 -10 17 cm ร2 on the yellow luminescence (YL) properties of wurtzite GaN has been studied by photoluminescence (PL) spectroscopy. Two types of n-type GaN samples grown by metal-organic che