β Scribed by Sung-Jin Kim; John R. Ireland; Carl R. Kannewurf; Mercouri G. Kanatzidis
No coin nor oath required. For personal study only.
The new Zintl phase Yb5In2Sb6 was obtained from a direct element combination reaction in a sealed graphite tube at 7003C and its structure was determined. It crystallizes in the orthorhombic space group Pbam (No. 55), in the Ba5Al2Bi6 structure type, with a unit cell of aβ«)5(2993.7Ψβ¬ A s , bβ«)6(100.32Ψβ¬ A s , cβ«)4(9315.4Ψβ¬ A s , and Zβ«.2Ψβ¬ Yb5In2Sb6 has a one-dimensional structure with in5nite anionic double chains (In2Sb6) 10Ψ separated by Yb 2Ψ ions. Each single chain is made of corner-sharing InSb4 tetrahedra. Two such chains are bridged by Sb2 groups to form double chains 1 [In2Sb 10Ψ 6
]. The compound satis5es the classical Zintl concept and is a narrow gap semiconductor. Band structure calculations suggest an direct band gap. Polycrystalline ingots of Yb5In2Sb6 showed electrical conductivity of 100 S/cm and a Seebeck coe7cient of &Ψ30 V/K at room temperature. The thermal conductivity of Yb5In2Sb6 is about 1.7 W/mK in the temperature range of 150+300 K.
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