Xenon ion induced atomic transport through aluminum-nitride interfaces

✍ Scribed by J. Sun; W. Bolse; K.P. Lieb; A. Traverse

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 638 KB
• Volume: 196
• Category: Article
• ISSN: 0921-5093
• DOI: 10.1016/0921-5093(94)09712-7

✦ Synopsis

Low-temperature Xe ion mixing of Cr xN (x = l, 2) and TiN films on A1 and vice versa was studied up to fluences of 2 x 10 ]6 Xe cm -2. Analysis via Rutherford backscatlering spectrometry at 0.9 MeV and 2.4 MeV e-energy and resonance nuclear reaction analysis provided the concentration profiles of all elements at the interface. All three elements located at the interface were found to be mixed at approximately the same rate and the athermal mixing process was mainly ballistic. Xe segregation at the interface was also observed.