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X-ray topographic observation of subsurface line defects in GaAs on Si substrate

✍ Scribed by T. Yamamoto; Y. Shiba; K. Fujita


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
788 KB
Volume
103
Category
Article
ISSN
0022-0248

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## Abstract In situ X‐ray examination at a synchrotron beamline of the solution growth of self‐assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assemb