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X-ray topographic determination of the intrinsic or extrinsic nature of stacking faults

✍ Scribed by Authier, A. ;Patel, J. R.


Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
632 KB
Volume
27
Category
Article
ISSN
0031-8965

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Determination of stacking fault densitie
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## Abstract Thick 3C‐SiC single crystals grown by continuous‐feed physical vapor transport (CF‐PVT) are studied by high‐resolution X‐ray reciprocal space mapping. These crystals contain Shockley‐type stacking faults (SFs) lying in the {111} planes, which give rise to diffuse intensity streaks along