Aluminium nitride thin Γlms grown at room temperature on degenerate silicon (conducting) substrates have been studied using XPS. The hydrolysis layer at the surface of the AlN was examined using valence band measurements, and the e β ect of 5 kV argon ion milling used to remove the hydrolysis layer w
X-ray photoelectron spectra of aluminium and oxidised aluminium
β Scribed by A. Barrie
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 375 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0009-2614
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