๐”– Bobbio Scriptorium
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X-ray diffraction, photoluminescence and composition standards of compound semiconductors

โœ Scribed by A. Roshko; K. Bertness; J. Armstrong; R. Marinenko; M. Salit; L. Robins; A. Paul; R. Matyi


Book ID
104556390
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
165 KB
Volume
0
Category
Article
ISSN
1862-6351

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## Abstract GaAs crystals and Al~0.43~Ga~0.57~As epitaxial layers of low dislocation density were implanted with 146 keV, 100 keV and 60 keV H^+^ ions and studied by recording of rocking curves, reciprocal space mapping and Braggโ€type section topography. The Xโ€ray investigation were performed also