X-ray crystal structure of the quaternary semiconductor compound: AgGaSn()Se4
✍ Scribed by E.R. de Gil; D.Gómez C.; A.V. Rivera; A. López-Rivera
- Publisher
- Elsevier Science
- Year
- 1984
- Weight
- 329 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0146-3535
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Accurate lattice parameters a and c of the tetragonal chalcopyrite quaternary semiconductor CuGaSnl3Se4 have been determined as a function of temperature by the X-ray powder diffraction method in the temperature range 300 K to about 900 K. The data have been used to evaluate the axial expansion coef
The ternary compound Cu 2 SnTe 3 crystallizes in the Imm2 (Nº 44) space group, Z = 2, with a = 12.833(4) Å, b = 4.274(1) Å, c = 6.043(1) Å, V = 331.5(1) Å 3 . Its structure was refined from X-ray powder diffraction data using the Rietveld method. The refinement of 25 instrumental and structural vari