X-ray crystal orientation determination for semiconductor single crystals
β Scribed by Dr. U. Keppler; M. Meier; A. Neifeind; C. Rohmer
- Publisher
- John Wiley and Sons
- Year
- 1975
- Tongue
- English
- Weight
- 313 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
β¦ Synopsis
Abstract
An improved method to measu reorientation angles of flat single crystals was developed taking Buerger precession technique. The method is described and compared with Laueβ and goniometer techniques. Advantages are low costs and short measuring time. An easy evaluation of the records allows to take this method as a routine angle determination for semiconductor manufacturing.
π SIMILAR VOLUMES
## Abstract A study of the crystal orientation and structural perfection of single crystal blades obtained by Bridgeman method from CMSXβ4 nickel superalloy at various withdrawal rates between 1 and 5 mm/min was carried out using the Laue diffraction method and Xβray diffraction topography methods