X-Ray Absorption Spectroscopy of Semiconductors
โ Scribed by Claudia S. Schnohr, Mark C. Ridgway (eds.)
- Publisher
- Springer-Verlag Berlin Heidelberg
- Year
- 2015
- Tongue
- English
- Leaves
- 367
- Series
- Springer Series in Optical Sciences 190
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
โฆ Table of Contents
Front Matter....Pages i-xvi
Introduction to X-Ray Absorption Spectroscopy....Pages 1-26
Front Matter....Pages 27-27
Binary and Ternary Random Alloys....Pages 29-47
Wide Band Gap Materials....Pages 49-76
Dopants....Pages 77-97
Complexes and Clusters....Pages 99-125
Vibrational Anisotropy....Pages 127-142
Front Matter....Pages 143-143
Amorphous Group IV Semiconductors....Pages 145-163
Amorphous Group IIIโV Semiconductors....Pages 165-186
Semiconductors Under Extreme Conditions....Pages 187-200
Front Matter....Pages 201-201
Group IV Quantum Dots and Nanoparticles....Pages 203-222
Group IV Nanowires....Pages 223-246
Group IIIโV and IIโVI Quantum Dots and Nanoparticles....Pages 247-268
Group IIIโV and IIโVI Nanowires....Pages 269-286
Front Matter....Pages 287-287
Magnetic Ions in Group IV Semiconductors....Pages 289-311
Magnetic Ions in Group IIIโV Semiconductors....Pages 313-338
Magnetic Ions in Group IIโVI Semiconductors....Pages 339-353
Back Matter....Pages 355-361
โฆ Subjects
Semiconductors; Optical and Electronic Materials; Spectroscopy and Microscopy; Characterization and Evaluation of Materials; Applied and Technical Physics; Optics and Electrodynamics
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