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Wurtzite to zinc-blende phase transition in gallium nitride thin films

โœ Scribed by Kim, Joo Han; Holloway, Paul H.

Book ID
127284137
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
232 KB
Volume
84
Category
Article
ISSN
0003-6951

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The gallium nitride (GaN) presents very good mechanical, chemical and physical properties, as high velocities. These properties make it more attractive for high power, temperature and frequency electronic applications. In this paper, the main electrical properties of GaN are first presented; then it