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Windstorm damage to buildings and structures in the UK during 2002

✍ Scribed by Paul Blackmore; Elina Tsokri


Book ID
111776281
Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
318 KB
Volume
59
Category
Article
ISSN
0043-1656

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 Γ— 10^15^ at/cm^2^ is reached, a highly disordered β€˜nanocry